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Home Country India Magnetoelectric (ME) resistive switching in non-lead based multiferroic thin films: A new emerging resistive random access memory (ME-RRAM). Program Fulbright Visiting Scholar Program Program Country India Grant Activity Type Research Discipline Materials Science Specialization Material Sciences Academic Year 2019-2020 Dates January 2020 - July 2021 Flex No Scholar type Non-U.S. (Visiting) Scholar Project Title Magnetoelectric (ME) resistive switching in non-lead based multiferroic thin films: A new emerging resistive random access memory (ME-RRAM). Scholar Information Grantee Mukesh Kumari Institution Independent Scholar/Unaffiliated Host Institutions Institution University of California, Berkeley Faculty Ramamoorthy Ramesh Host Department Department of Materials Science & Engineering and Physics
Magnetoelectric (ME) resistive switching in non-lead based multiferroic thin films: A new emerging resistive random access memory (ME-RRAM). Program Fulbright Visiting Scholar Program Program Country India Grant Activity Type Research Discipline Materials Science Specialization Material Sciences Academic Year 2019-2020 Dates January 2020 - July 2021 Flex No Scholar type Non-U.S. (Visiting) Scholar Project Title Magnetoelectric (ME) resistive switching in non-lead based multiferroic thin films: A new emerging resistive random access memory (ME-RRAM). Scholar Information Grantee Mukesh Kumari Institution Independent Scholar/Unaffiliated Host Institutions Institution University of California, Berkeley Faculty Ramamoorthy Ramesh Host Department Department of Materials Science & Engineering and Physics